Can't speak about specific devices being developed. That is for engineers...
I can tell you about the physics of magnetic devices... and the fact is that changing the magnetization of a adjacent layers is a much faster event than the charging of a capacitor in an RC circuit.
So... first gen MRAM devices have speeds on the order of current DRAM devices. However, the physics of MRAM devices would allow for future increases that aren't possible in DRAM.
2cents...
CEM
I can tell you about the physics of magnetic devices... and the fact is that changing the magnetization of a adjacent layers is a much faster event than the charging of a capacitor in an RC circuit.
So... first gen MRAM devices have speeds on the order of current DRAM devices. However, the physics of MRAM devices would allow for future increases that aren't possible in DRAM.
2cents...
CEM
Comment