Samsung Electronics announced the completion of development of a 288Mb Direct Rambus® DRAM (RDRAM) component and 576MB Rambus In-line Memory Module (RIMM?) Module. A design rule of 0.17-micron is used. The data processing speed at each pin has been improved to 800Mb per second, so the device can process the equivalent of 6,550 newspaper pages of information per second.
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