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SAN MATEO, Calif. — Memory module maker Kentron Technologies Inc. plans to demonstrate a way to juice up double-data-rate DRAM bandwidth using common field-effect transistor (FET) switches.
At the Platform Conference to be held in San Jose, Calif., Jan. 23 and 24, Kentron (Wilmington, Mass.) will show how its quad-band memory technology can boost DRAM memory bandwidth of 100-MHz (200-MHz effective) double-data-rate (DDR) DRAM from 1.6 gigabytes/second to 3.2 Gbytes/s. In addition, the company promises that the technology will scale for each succeeding generation of DDR DRAM.
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SAN MATEO, Calif. — Memory module maker Kentron Technologies Inc. plans to demonstrate a way to juice up double-data-rate DRAM bandwidth using common field-effect transistor (FET) switches.
At the Platform Conference to be held in San Jose, Calif., Jan. 23 and 24, Kentron (Wilmington, Mass.) will show how its quad-band memory technology can boost DRAM memory bandwidth of 100-MHz (200-MHz effective) double-data-rate (DDR) DRAM from 1.6 gigabytes/second to 3.2 Gbytes/s. In addition, the company promises that the technology will scale for each succeeding generation of DDR DRAM.
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[This message has been edited by Himself (edited 12 January 2001).]
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